(Hong Kong)
Product Summary
The MMBT2222 is a NPN general purpose amplifier. Its package is SOT-23.
Parametrics
Absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 30Vdc; (2)Collector–Base Voltage, VCBO: 60Vdc; (3)Emitter–Base Voltage, VEBO: 5.0Vdc; (4)Collector Current — Continuous, IC: 600mAdc.
Features
Thermal characteristics: (1)total device dissipation FR-5 board, PD: 225mW max when TA=25℃; 1.8mW/℃ max when derate above 25℃; (2)thermal resistance, junction to ambient, RθJA: 556℃/W max; (3)total device dissipation, PD: 300mW max when aluminal substrate, TA=25℃; 2.4mW/℃ max when derate above 25℃; (4)thermal resistance, junction to ambient, RθJA: 417℃/W max; (5)junction and storage temperature, TJ, Tstg: -55 to +150℃ max.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MMBT2222 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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MMBT2222_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
|
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|
MMBT2222A_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Gen Purpose |
Data Sheet |
Negotiable |
|
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|
MMBT2222A-7 |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 300mW |
Data Sheet |
Negotiable |
|
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|
MMBT2222A-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 300mW |
Data Sheet |
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MMBT2222A-G |
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TRANSISTOR NPN 40V 600MA SOT-23 |
Data Sheet |
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MMBT2222A-GS08 |
Vishay Semiconductors |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
Negotiable |
|
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|
MMBT2222AK |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN EPITAXIAL SILICON |
Data Sheet |
Negotiable |
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