Product Summary

The APT8065BVRG is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

Parametrics

APT8065BVRG absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 800 Volts; (2)Continuous Drain Current at TC = 25℃, ID: 13 Amps; (3)Pulsed Drain Current, IDM: 52 Amps; (4)Gate-Source Voltage Continuous, VGS: ±30 Volts; (5)Gate-Source Voltage Transient, VGSM: ±40 Volts; (6)Total Power Dissipation at TC = 25℃, PD: 280 Watts; (7)Linear Derating Factor: 2.24 W/℃; (8)Operating and Storage Junction Temperature Range, Tj, Tstg: -55 to 150℃; (9)Lead Temperature: 0.063 inch from Case for 10 Sec, TL: 300℃; (10)Avalanche Current, IAR: 13 Amps; (11)Repetitive Avalanche Energy, EAR: 30mJ; (12)Single Pulse Avalanche Energy, EAS: 1210mJ.

Features

APT8065BVRG features: (1)Faster Switching; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular TO-247 Package.

Diagrams

APT8065BVRG block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT8065BVRG
APT8065BVRG

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Data Sheet
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Data Sheet
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