(Hong Kong)
Product Summary
The IS62C1024L-35TI is a low power,131,072-word by It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. The IS62C1024L-35TI is available in 32-pin plastic SOP and TSOP (type 1) packages.
Parametrics
IS62C1024L-35TI absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TSTG, Storage Temperature: –65 to +150℃; (3)PT, Power Dissipation: 1.5 W; (4)IOUT, DC Output Current (LOW): 20 mA.
Features
IS62C1024L-35TI features: (1)High-speed access time: 35, 70 ns; (2)?Low active power: 450 mW (typical); (3)Low standby power: 150 μW (typical) CMOS standby; (4)Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V (±10%) power supply.
Diagrams
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 IS620 |
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IS621 |
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IS62C1024 |
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IS62C1024 - |
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IS62C10248AL-55TLI-TR |
ISSI |
SRAM 8M (1Mx8) 55ns Async SRAM 5v |
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IS62C1024AL-35QLI |
ISSI |
SRAM 1Mb 128K x 8 35ns 5v Async SRAM 5v |
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