Product Summary

The MG100Q2YS65H is silicon N channel IGBT, which has a wide application as high power and high speed switching. It is featured with high input impedance and enhancement-mode. What is more, the electrodes are isolated from case.

Parametrics

Absolute maximum ratings:(1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: 20V; (3)Collector current, at DC condition, IC: 100A; (4)Collector current, at 1ms condition, ICP: 200A; (5)Forward current, DC, IF: 100A; (6)Forward current, 1 ms, IFM: 200A; (7)Collector power dissipation(Tc=25℃), PC: 690W; (8)Junction temperature, Tj: 150℃; (9)Storage temperature range, Tstg: -40 to 125℃; (10)Isolation voltage, VIsol, 2500(AC 1 minute)V; (11)Screw torque, Terminal: 3N.m; (12)Screw torque, Mounting: 3N.m.

Features

Features:(1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.

Diagrams

MG1000E
MG1000E

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Data Sheet

Negotiable 
MG1001
MG1001

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Data Sheet

Negotiable 
MG1001E
MG1001E

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Data Sheet

Negotiable 
MG1002E
MG1002E

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Data Sheet

Negotiable 
MG1004
MG1004

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Data Sheet

Negotiable 
MG1004E
MG1004E

Other


Data Sheet

Negotiable