M29W040B

4 Mbit, non-volatile memory, 32PLCC, 55ns, 2.7 V ~ 3.6 V, RoHS Compliant

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Price:: US $0.10~0.50 / piece [Get Latest Price]

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PartNumber:: M29W040B

Brand:: STMicroelectronics - ST | Pack: PLCC | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-06

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Product Summary

The M29W040B is a 4 Mbit (512Kb×8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W040B is fully backward compatible with the M29W040. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

M29W040B absolute maximum ratings: (1)TA, Ambient Operating Temperature (Temperature Range Option 1): 0 to 70℃; Ambient Operating Temperature (Temperature Range Option 6): –40 to 85℃; (2)TBIAS, Temperature Under Bias: –50 to 125℃; (3)TSTG, Storage Temperature: –65 to 150℃; (4)VIO, Input or Output Voltage: –0.6 to 4 V; (5)VCC, Supply Voltage: –0.6 to 4 V; (6)VID, Identification Voltage: –0.6 to 13.5 V.

Features

M29W040B features: (1)single 2.7 to 3.6V supply voltage for program, erase and read operations; (2)access time: 55ns; (3)programming time: 10μs per Byte typical; (4)8 uniform 64 Kbytes memory blocks; (5)program/erase controller: Embedded Byte Program algorithm; Embedded Multi-Block/Chip Erase algorithm; Status Register Polling and Toggle Bits; (6)erase suspend and resume modes: Read and Program another Block during Erase Suspend; (7)unlock bypass program command: Faster Production/Batch Programming; (8)low power consumption: Standby and Automatic Standby; (9)100,000 program/erase cycles per block; (10)20 years data retention: Defectivity below 1 ppm/year; (11)electronic signature: Manufacturer Code: 20h; Device Code: E3h.